Samsung has launched the 9th generation TLC 3D V-NAND with a record-breaking speed interface

Samsung announced that it has begun mass production of 9th generation 3D V-NAND TLC flash memory with a capacity of 1 Tbit. The new chips offer increased density and power efficiency compared to 8th generation 3D V-NAND TLC memory chips.

The manufacturer did not specify the number of layers used in the 9th generation 3D V-NAND TLC memory with a capacity of 1 Tbit, as well as the technical process used for their production. However, Samsung noted that with the industry’s smallest cell size, the bit density of the 9th generation 3D V-NAND TLC chips has been improved by approximately 50% compared to the previous generation 3D V-NAND TLC memory. The manufacturer also reported that the new memory chips use interference-prevention technology, the cells have an increased service life, and the elimination of fictitious holes in conductive channels has made it possible to significantly reduce the planar area of ​​memory cells.

The 9th generation 3D V-NAND TLC flash memory features the next-generation Toggle 5.1 interface, which increases I/O speeds by 33% to 3.2 Gbps per pin. Along with this, the company has reduced energy consumption by 10% compared to the previous generation.

In the second half of the year, Samsung plans to begin production of ninth-generation 3D V-NAND with a capacity of 1 Tbit with QLC cells.